 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 0.5 - 12 GHz General Purpose Gallium Arsenide FET Technical Data ATF-10736 Features * High Associated Gain: 13.0 dB Typical at 4 GHz * Low Bias: VDS = 2 V, IDS = 25 mA * High Output Power: 20.0 dBm typical P 1 dB at 4 GHz * Low Noise Figure: 1.2 dB Typical at 4 GHz * Cost Effective Ceramic Microstrip Package * Tape-and-Reel Packaging Option Available [1] Description The ATF-10736 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. Its noise figure makes this device appropriate for use in the gain stages of low noise amplifiers operating in the 0.5-12 GHz frequency range. This GaAs FET device has a nominal 0.3 micron gate length using airbridge interconcnects between drain fingers. Total gate periphery is 500 microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. 36 micro-X Package Electrical Specifications, TA = 25C Symbol NFO Parameters and Test Conditions Optimum Noise Figure: VDS = 2 V, IDS = 25 mA f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 2.0 GHz f = 4.0 GHz f = 6.0 GHz f = 4.0 GHz f = 4.0 GHz Units dB dB dB dB dB dB dBm dB mmho mA V 70 70 -4.0 12.0 Min. Typ. Max. 0.9 1.2 1.4 16.5 13.0 10.5 20.0 12.0 140 130 -1.3 180 -0.5 1.4 GA Gain @ NFO; VDS = 2 V, IDS = 25 mA P1 dB G1 dB gm IDSS VP Power Output @ 1 dB Gain Compression VDS = 4 V, IDS = 70 mA 1 dB Compressed Gain: VDS = 4 V, IDS = 70 mA Transconductance: VDS = 2 V, VGS = 0 V Saturated Drain Current: VDS = 2 V, VGS = 0 V Pinchoff Voltage: VDS = 2 V, IDS = 1 mA Note: 1. Refer to PACKAGING section, "Tape-and-Reel Packaging for Surface Mount Semiconductors." 5-29 5965-8698E ATF-10736 Absolute Maximum Ratings Symbol VDS VGS VGD IDS PT TCH TSTG Parameter Drain-Source Voltage Gate-Source Voltage Gate-Drain Voltage Drain Current Total Power Dissipation [2,3] Channel Temperature Storage Temperature[4] Units V V V mA mW C C Absolute Maximum[1] + 5 -4 -7 IDSS 430 175 -65 to +175 Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE TEMPERATURE = 25C. 3. Derate at 2.9 mW/C for TCASE > 25C. 4. Storage above +150C may tarnish the leads of this package difficult to solder into a circuit. After a device has been soldered into a circuit, it may be safely stored up to 175C. 5. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section for more information. Thermal Resistance: Liquid Crystal Measurement: jc = 350C/W; TCH = 150C 1m Spot Size[5] Part Number Ordering Information Part Number ATF-10736-TR1 ATF-10736-STR Devices Per Reel 1000 10 Reel Size 7" STRIP For more information, see "Tape and Reel Packaging for Semiconductor Devices." ATF-10736 Noise Parameters: VDS = 2 V, IDS = 25 mA Freq. GHz 1.0 2.0 4.0 6.0 8.0 NFO dB 0.8 0.9 1.2 1.4 1.7 opt Mag 0.88 0.75 0.48 0.46 0.53 Ang 41 85 159 -122 -71 RN/50 0.52 0.27 0.08 0.08 0.43 ATF-10736 Typical Performance, TA = 25C 18 15 GA 30 25 30 25 MSG GA (dB) 2.0 1.5 12 9 6 20 20 MSG GAIN (dB) 15 |S21|2 GAIN (dB) 15 10 5 0 0.5 NFO (dB) |S21|2 MAG MSG 1.0 0.5 0 2.0 NFO 10 5 0 0.5 MAG 4.0 6.0 8.0 10.0 12.0 1.0 2.0 4.0 6.0 8.0 12.0 1.0 2.0 4.0 6.0 8.0 12.0 FREQUENCY (GHz) FREQUENCY (GHz) FREQUENCY (GHz) Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2V, IDS = 25 mA, TA = 25C. Figure 2. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 25 mA. Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 4 V, IDS = 70 mA. 5-30 Typical Scattering Parameters, Common Source, Z O = 50 , TA = 25C, VDS = 2 V, IDS = 25 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 S11 Mag. .96 .92 .77 .59 .49 .43 .49 .57 .68 .73 .77 .82 .85 Ang. -20 -40 -76 -107 -136 -179 138 106 81 62 47 36 22 dB 15.4 15.2 13.8 12.5 11.2 10.0 8.6 7.3 5.6 4.2 3.0 1.0 -0.2 S21 Mag. 5.90 5.77 4.92 4.20 3.64 3.15 2.74 2.32 1.92 1.62 1.41 1.12 0.98 Ang. 162 144 109 83 57 32 8 -13 -32 -50 -66 -81 -97 dB -32.4 -26.7 -21.3 -20.0 -17.3 -15.5 -14.9 -14.8 -14.7 -14.8 -14.8 -14.6 -14.5 S12 Mag. .024 .046 .086 .111 .137 .167 .179 .183 .185 .183 .182 .186 .189 S22 Ang. 77 66 52 40 24 9 -5 -18 -33 -40 -52 -67 -75 Mag. .50 .48 .39 .33 .26 .14 .05 .19 .33 .42 .46 .50 .51 Ang. -10 -21 -34 -45 -61 -65 22 60 57 46 38 27 15 Typical Scattering Parameters, Common Emitter, Z O = 50 , TA = 25C, VDS = 4 V, IDS = 70 mA Freq. GHz 0.5 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 S11 Mag. .90 .79 .57 .43 .36 .35 .47 .65 .77 .83 .86 .87 .91 Ang. -32 -53 -96 -129 -163 156 110 78 58 44 30 16 1 dB 19.0 18.0 15.5 13.3 11.6 10.1 8.8 7.0 5.1 3.5 2.4 1.1 0.1 S21 Mag. 8.95 7.96 5.99 4.60 3.78 3.21 2.76 2.23 1.80 1.50 1.32 1.13 0.99 Ang. 147 128 90 64 39 16 -11 -36 -56 -72 -88 -106 -123 dB -34.9 -28.6 -22.5 -19.5 -17.3 -15.6 -14.5 -14.2 -14.1 -14.2 -14.5 -14.8 -15.3 S12 Mag. .018 .037 .075 .106 .136 .166 .189 .196 .198 .195 .188 .182 .171 S22 Ang. 77 70 56 43 31 14 -5 -23 -38 -48 -64 -77 -91 Mag. .40 .38 .34 .31 .28 .22 .15 .28 .42 .51 .55 .60 .65 Ang. -7 -17 -38 -50 -51 -45 -4 35 37 33 26 18 7 A model for this device is available in the DEVICE MODELS section. 5-31 36 micro-X Package Dimensions 2.15 (0.085) SOURCE 4 DRAIN 3 0.508 (0.020) 2.11 (0.083) DIA. GATE 1 107 SOURCE 1.45 0.25 (0.057 0.010) 2 2.54 (0.100) 0.15 0.05 (0.006 0.002) 0.56 (0.022) 4.57 0.25 0.180 0.010 Notes: 1. Dimensions are in millimeters (inches) 2. Tolerances: in .xxx = 0.005 mm .xx = 0.13 5-32 |
Price & Availability of ATF-10736
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |